首页>
外国专利>
UNIAXIAL STRAIN RELAXATION OF BIAXIAL-STRAINED THIN FILMS USING ION IMPLANTATION
UNIAXIAL STRAIN RELAXATION OF BIAXIAL-STRAINED THIN FILMS USING ION IMPLANTATION
展开▼
机译:离子注入双轴约束薄膜的单轴应变松弛
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for achieving uniaxial strain on originally biaxial-strained thin films after uniaxial strain relaxation induced by ion implantation is provided. The biaxial-strained thin film receives ion implantation after being covered by a patterned implant block structure. The strain in the uncovered region is relaxed by ion implantation, which induces the lateral strain relaxation in the covered region. When the implant block structure is narrow (dimension is comparable to the film thickness), the original biaxial strain will relax uniaxially in the lateral direction.
展开▼