The strain resistant thin film and the production method and the strain resistant element and the strain detection device which use the strain resistant thin film

摘要

P To realize a higher GF and a lower TCR as to a strain-resistance thin film for use in various sensors and to reduction the variations in the TCRs of a plurality of elements in a bridge circuit. PSOLUTION: This strain-resistance element 10 is formed by laminating the strain-resistance thin film 4 consisting mainly of chromium and oxygen and electrodes 6, and a protective film 8 ON a substrate 2 of Si etc. having an oxide film ON the surface thereof. This strain-resistance thin film 4 is formed by providing chromium regions 12 and chromium oxide regions 14, and alternately arranging a plurality of chromium regions 12 and chromium oxide regions 14. PCOPYRIGHT: (C)2008 and JPO& INPIT