首页> 中文期刊> 《半导体光子学与技术:英文版 》 >Analytical Expression of Relaxation Luminescence in ZnS:Er^(3+)Thin Films

Analytical Expression of Relaxation Luminescence in ZnS:Er^(3+)Thin Films

             

摘要

The relaxation luminescence of ZnS:Er 3+ thin films is studied with luminescence dynamics model. The excitation and emission processes of Er 3+ in ZnS host are described through the resonant energy transfer method. Taking the energy storing effect of the traps into account, an expression is obtained by using the convolution formula, which may describe luminescence decay process containing the multiple relaxation luminescence peaks. The experimental results confirm that the relaxation characteristics of the electroluminescence are related to the carriers captured by the bulk traps.

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