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Misfit strain relaxations of (101)-oriented ferroelectric PbTiO_3/(La, Sr)(Al, Ta)O_3thin film systems

机译:(101)取向铁电PbTiO_3 /(La,Sr)(Al,Ta)O_3薄膜系统的应变失配

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摘要

High-index ferroelectric thin films show excellent dielectricity, piezoelectricity and switching behaviors. Understanding the misfit strain relaxation behavior may prove beneficial to gaining insights into the high-quality growth of high-index ferroelectric films. In this study, ferroelectric PbTiO3 thin films were deposited on the (101)-oriented (La, Sr)(Al, Ta)O-3 substrate by pulsed laser deposition and were investigated using (scanning) transmission electron microscopy. Two types of misfit dislocations with line directions of 111 and [010] were found at the interface. The 111 dislocation exhibited Burgers vectors of alpha[011] or alpha[011], while the [010] dislocation featured Burgers vectors of a alpha[101]. The former might be generated by gliding, and the latter by climbing. We propose that the misfit strain relaxation in this film system basically results from the formation of dislocations and the residual misfit strain is relaxed via the formation of 90 degrees ac domains.
机译:高折射率铁电薄膜显示出优异的介电性,压电性和开关性能​​。理解失配应变松弛行为可能证明有助于深入了解高折射率铁电薄膜的高质量生长。在这项研究中,铁电性​​PbTiO3薄膜通过脉冲激光沉积法沉积在(101)取向(La,Sr)(Al,Ta)O-3衬底上,并使用(扫描)透射电子显微镜进行了研究。在界面处发现了两种类型的错配位错,其线方向为<111>和[010]。 <111>位错表现为alpha [011]或alpha [011]的Burgers向量,而[010]位错表现为alpha [101]的Burgers向量。前者可能是通过滑行产生的,而后者可能是通过攀爬产生的。我们提出该膜系统中的失配应变弛豫基本上是由位错的形成引起的,而残余的失配应变是通过90度ac域的形成而松弛的。

著录项

  • 来源
    《Journal of Materials Research》 |2018年第24期|4156-4164|共9页
  • 作者单位

    Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;

    Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China;

    Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China;

    Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Gansu, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ferroelectric film; transmission electron microscopy; misfit strain relaxation;

    机译:铁电薄膜;透射电镜;失配应变松弛;

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