SEMICONDUCTOR DEVICE HAVING THROUGH-SILICON VIAS FOR HIGH CURRENT,HIGH FREQUENCY, AND HEAT DISSIPATION

摘要

An integrated circuit device (100) with a semiconductor chip (101) having vias (103) two-dimensionally arrayed across the chip area. The metal-filled via core is suitable for electrical power and ground and heat dissipation, or for high frequency signals; at the top, the core is connected to transistors (102), and at the bottom to a metal stud (420.) The device further has a two-dimensional planar array of substantially identical metallic pads (120) separated by gaps (123, 223.) The array has two sets of pads: The first pad set (124) is located in the array center under the chip; the pad locations match the vias and each pad is in contact with the stud of the respective via. The second pad set (125) is located at the array periphery around the chip; these pads have bond wires (150) to a respective transistor terminal. Encapsulation compound (110) covers the chip and the wire connections, and fills the gaps between the pads.