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Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique
Ultra-thin Si channel MOSFET using a self-aligned oxygen implant and damascene technique
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机译:采用自对准氧注入和镶嵌技术的超薄Si沟道MOSFET
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摘要
The present invention provides a method of forming a thin channel MOSFET having low external resistance. The method comprises forming a dummy gate region atop a substrate; implanting oxide forming dopant through said dummy gate to create a localized oxide region in a portion of the substrate aligned to the dummy gate region that thins a channel region; forming source/drain extension regions abutting said channel region; and replacing the dummy gate with a gate conductor.
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