Dielectric etch method with high density and low bombardment energy plasma providing high etch rates

摘要

In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF4, N2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H2, NH3, a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH2F2, CH3F; and/or CHF3. The fluorocarbon gas can include C4F8, C4F6 and/or C5F8.