DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMENT ENERGY PLASMA PROVIDING HIGH ETCH RATES

摘要

In at least some embodiments, a plasma etch tool is provided which includes a processing chamber capable of receiving a workpiece. The plasma etch tool is configured to generate a high density and low bombardment energy plasma therein from a gas mixture which includes CF₄, N₂ and Ar, for processing the workpiece. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The density or electron density, can, depending on the embodiment, range from about 5×10¹⁰ electrons/cm³ and above, including about 1×10¹¹ electrons/cm³ and above. The gas mixture can further include H₂, NH₃, a hydrofluorocarbon gas and/or a fluorocarbon gas.