WAFER BACKSIDE DEFECT REMOVING METHOD BY LASER ANNEAL

摘要

It is arranged to prevent the excessive or less polishing of mode focus by a defect removal method of the wafer backside of laser annealing, by shakeouing the surface of chip and removing defect in advance. A kind of method, for removing the deformity being present among the back side of chip (10) the following steps are included: completeness check step, it includes particle (20) that it, which is used to detect position and the size of deformity, by using particle detector and pin hole (30), is present among wafer backside (10b); Laser annealing step, local irradiation laser beam (50), when the position injection inert gas existing for the deformity wherein. In completeness check step, it is used to detect the size of position and deformity, laser beam is irradiated to the angel at the rear portion of chip and the laser beam from the surface perceived reflection of wafer backside.