METHOD FOR FORMING THIN FILM SILICON USING METAL INDUCED GROWTH AND ELECTRONIC DEVICE MANUFACTURED THIN FILM SILICON BY THE SAME

摘要

The thin-film silicon formation method using the metallic catalyst growth is provided to reduce the process cost and to form the thin film silicon layer of the large area by forming the thin-film silicon of the micro size through the metallic catalyst method of growth. The thin-film silicon formation method using the metallic catalyst growth comprises as follows. A step is for forming the metal layer at the upper part of the substrate(1). A step is for forming the silicide layer(2) by silicidating the metal layer. A step is for forming the crystalline thin film silicon layer(3) by growing silicide layer through the continuous silicon supply. The thin film silicon layer of the large area by forming the thin-film silicon of the micro size can be formed.