THRESHOLD VOLTAGE MODEL OF ASYMMETRIC DOUBLE GATE FILED EFFECT TRANSISTOR

摘要

A kind of method, the starting voltage for modeling an asymmetric double-gate structure is arranged to design one can be by disclosing the structure of one device attribute of optimized relation of a starting voltage and a leakage current. The modeling of a starting voltage about a multiple gate field effect transistor is executed by DOPOS doped polycrystalline silicon. The control planning of a threshold voltage model of one asymmetry MuGFET (multiple gate field effect transistor) effectively a starting voltage and a leakage current. Starting voltage and the relationship of leakage current are becoming specific by using threshold voltage model. By using threshold voltage model, a starting voltage (such as a true starting voltage) is applied. Threshold voltage model is applied to a device simulation and a circuit simulation by simplifying threshold voltage model.