SINGLE ELECTRON TRANSISTOR WITH VERTICAL QUANTUM DOT AND FABRICATION METHOD OF THE SAME

摘要

A single electron transistor having a vertical quantum dot and a manufacturing method thereof are provided to integrate simultaneously a MOSFET of a vertical channel structure by forming a quantum dot at a vertical channel. A single electron transistor having a vertical quantum dot includes a silicon layer(10), a first gate insulating layer(22), a control gate(56), a second gate insulating layer(70), and a first and second sidewall gates(82). The silicon layer of constant width and height is patterned in a longitudinal direction on an upper part of a buried oxide layer(2) of a SOI substrate. The first gate insulating layer is formed on a vertical side of the silicon layer. The control gate is formed at both sides of the first gate insulating layer on the buried oxide layer. The control gate is adjacent to the silicon layer. The second gate insulating layer is formed to surround three surfaces of the control gate. The first and second sidewall gates come in contact with the second insulating layer at both sides of the first gate insulating layer. The first and second sidewall gates are formed on the buried oxide layer at both sides of the control gate.