SINGLE ELECTRON TRANSISTOR WITH VERTICAL QUANTUM DOT AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A single electron transistor and a method for manufacturing the same are provided to form two quantum dots on one silicon pin by forming two side gates and control gates on a first gate insulating film along a channel. CONSTITUTION: A silicon layer(16a) includes a vertical pin shaped channel region on a buried oxide film of a silicon-on-insulator substrate(14). A first gate insulating film(62) forms at vertical pin side on the channel region. A first side gate(71) and a second side gate(72) are separately formed on the buried oxide film. A control gate(82) is formed on the buried oxide film. The side gates and the control gate are symmetrically formed at both sides of the channel region.