METHOD FOR FABRICATION OF VANADIUM OXIDE THIN FILMS BY USING ATOMIC LAYER DEPOSITION

摘要

A method for forming a vanadium dioxide layer using an atomic layer deposition method is provided to form a uniform and thin film by removing inert gas except vanadium absorbed to the surface of a silicon substrate. A method for forming a vanadium dioxide layer includes the following steps of: absorbing vanadium on the surface a silicon substrate; forming a vanadium dioxide layer by reacting plasmalyzed oxygen with the absorbed vanadium; and removing the rest with inert gas except the vanadium. The inert gas includes argon. The surface temperature of the silicon substrate is 100~500‹C.