METHOD FOR GROWING A NITRIDE SEMICONDUCTOR, CAPABLE OF OBTAINING AN EXCELLENT NITRIDE SEMICONDUCTOR THIN FILM

摘要

PURPOSE: A method for growing a nitride semiconductor is provided to minimize bend of a substrate by dividing a substrate into two and growing a nitride-based semiconductor on the substrate.;CONSTITUTION: A method for growing a nitride semiconductor is comprised of the steps: providing a reaction chamber(111) in which a susceptor(112); mounting a substrate on a susceptor and dividing the substrate into several regions; forming nitride-based semiconductor on the substrate; and dividing the substrate into 3~4 regions of same size. The substrate is made of one of sapphire(Al2O3), GaN, SiC, Si, GaAs, and ZnO.;COPYRIGHT KIPO 2010