DEVICE AND A METHOD FOR GROWING A THIN FILM SINGLE CRYSTALS OF NITRIDE SEMICONDUCTORS, CAPABLE OF PREVENTING THE DEFORMATION OF A SUBSTRATE DUE TO HEAT

摘要

PURPOSE: A device and a method for growing a thin film single crystals of nitride semiconductors are provided to easily manufacture a semiconductor emitting device having excellent emission property by preventing undesired distribution of a doping element and the deterioration of a substrate and a thin film due to low temperature.;CONSTITUTION: In a device and a method for growing a thin film single crystals of nitride semiconductors, a substrate(5) is mounted in a substrate mounting unit(6) inside a processing chamber(7). A beam generation source(1) is installed on the processing chamber. A solid element generation source(3) is mounted in the upper part of the process chamber. The solid element generation source operates in a modulation mode in which generation and stop is repeatedly The solid element generation source inserts a third group element to an effusion cell, and it heats the effusion cell to makes the third group element into a vapor and discharge it.;COPYRIGHT KIPO 2011