METHOD AND SYSTEM FOR EPITAXIALLY GROWING THIN FILM OF NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To prevent hydrogen, causing drop in In intake rate, from being fed onto a substrate by providing a piping for supplying group V material to a reaction furnace with a unit for decomposing group V material and a unit for adsorbing decomposed hydrogen through a hydrogen occlusion alloy in front of the reaction furnace. ;SOLUTION: A group V material, i.e., NH₃, fed from a supply line 1 is thermally decomposed by means of a heater 8 and decomposed gas is introduced to a hydrogen adsorbing unit 9 encapsulating a hydrogen occulusion alloy. On the other hand, NH₃ introduced from the line 1 and decomposed by the heater 8 is fed to a hydrogen removing unit 9 and only hydrogen is discharged through a hydrogen transmitting Pd alloy film. At the time of growing InGaN, NH₃ is thermally decomposed by the decomposition heater 8 and introduced to the hydrogen removing unit 9 before being fed to a reaction furnace thus preventing hydrogen, causing drop in In intake rate, from being fed onto a substrate.;COPYRIGHT: (C)1999,JPO