Plazma etching method for forming piramidal texture on silicon surface

摘要

The present invention relates to a plasma etching method and apparatus for forming a pyramidal texture on a surface of silicon substrate used for solar cell or the like. More par¬ ticularly, the present invention relates to a plasma etching method and apparatus, wherein there are provided a plasma generator having gas injection holes for injecting etching gas activated by plasma and a gas supply unit for supplying high pressure etching gas to the plasma generator, and an etching reaction is induced on a surface of silicon substrate by particles of etching gas injected at a high flow rate under a pressure of 1 Torr or more to thereby form a pyramidal texture, whereby the structure of the etching apparatus can be simplified since an additional device for maintaining a high vacuum state is not required, and the reaction efficiency can be enhanced by etching gas particles of high density.