Volatile read - read - memory and method for operating a volatile read - read - memory

摘要

Volatile read - read - memory (10) with a plurality of read amplifier strips (16), each of which has a plurality of sense amplifiers (17), and memory cell arrays (12), the respective bit lines (13) and on the bit lines (13) have memory cells (15) connected,– wherein the plurality of read amplifier strips (16) at least two outer read amplifier strips (16a, 16b) between which the rest of the read amplifier strips (16) and the memory cell arrays (12) are arranged,– in addition to at least one of the outer read amplifier strips (16a, 16b) a reference circuit field (1) is arranged, the reference lines (2) and which is connected to the reference circuit elements (3), and– the reference lines (2) are shorter than the bit lines (13) of the memory cell arrays (12).