首页> 外国专利> NON-VOLATILE MEMORY SYSTEM INCLUDING A PLURALITY OF MEMORY CELL ARRAYS HAVING DIFFERENT READ STAND-BY TIME AND DATA READ METHOD OF THE NON-VOLATILE MEMORY SYSTEM

NON-VOLATILE MEMORY SYSTEM INCLUDING A PLURALITY OF MEMORY CELL ARRAYS HAVING DIFFERENT READ STAND-BY TIME AND DATA READ METHOD OF THE NON-VOLATILE MEMORY SYSTEM

机译:包含多个具有不同读取时间和非易失性存储系统数据读取方法的存储单元阵列的非易失性存储系统

摘要

A non-volatile memory system comprising a plurality of memory cell arrays having different read stand-by time and a data read method of the non-volatile memory system are provided to start to read data from a memory cell array with short read stand-by time after receiving a read command at the same time and starting to prepare read operation at the same time. A single-level cell array(310) includes a number of single-level cells. A multi-level cell array(320) includes a number of multi-level cells. The multi-level cell(MLC) and the single-level cell(SLC) receive a read command at the same time, and start to prepare read operation at the same time. The single-level cell array starts to read data earlier than the multi-level cell array.
机译:提供一种包括具有不同读取待机时间的多个存储单元阵列的非易失性存储系统以及该非易失性存储系统的数据读取方法,以以短读取待机时间开始从存储单元阵列读取数据在同时接收到读取命令并开始同时准备读取操作之后的时间。单级单元阵列(310)包括多个单级单元。多层单元阵列(320)包括多个多层单元。多层单元(MLC)和单层单元(SLC)同时接收读取命令,并同时开始准备读取操作。单级单元阵列比多级单元阵列更早开始读取数据。

著录项

  • 公开/公告号KR20080069480A

    专利类型

  • 公开/公告日2008-07-28

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20070007247

  • 发明设计人 KANG DONG KU;

    申请日2007-01-23

  • 分类号G11C16/26;G11C16/04;

  • 国家 KR

  • 入库时间 2022-08-21 19:53:15

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