POLY-EMITTER TYPE BIPOLAR TRANSISTOR, BCD DEVICE, POLY-EMITTER TYPE BIPOLAR TRANSISTOR MANUFACTURING METHOD, AND BCD DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a poly-emitter type bipolar transistor using a BCD device process, a manufacturing method therefor, a BCD device, and a manufacturing method therefor.;SOLUTION: The poly-emitter type bipolar transistor according to an embodiment includes: an embedded layer 110 formed on part of an upper side of a semiconductor substrate 100; an epilayer 120 formed on the semiconductor substrate; a collector region 130 formed on the epilayer and coupled to the embedded layer; a base layer 140 formed on part of an upper side of the epilayer; and a poly-emitter region 170 that is formed on the surface of a substrate of the base region and is comprised of a polysilicon material. The BCD device according to the embodiment includes a poly-emitter type bipolar transistor that includes a poly-emitter region comprised of the polysilicon material and includes one or more MOSs of a CMOS and a DMOS formed on the same single wafer as that on which the bipolar transistor is formed.;COPYRIGHT: (C)2010,JPO&INPIT