Study and Optimization of a Technological Process for the Fabrication of Heterojunction Bipolar Transistors. Applications to High Speed Devices

摘要

The main manufacturing techniques including liquid phase epitaxy, molecular beam epitaxy, and metal organic chemical vapor deposition are investigated for GaAs devices. Improvements are suggested in each case. The different technological steps available for the entire transistor fabrication are analyzed, and an optimum process is determined.