首页>
外国专利>
Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereof
Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereof
展开▼
机译:具有异质结双极晶体管和其他组件集成在一起的化合物半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A heterojunction bipolar transistor and a protective PIN diode are implemented by two multi-layered compound semiconductor structures epitaxially grown on respective regions of a semi-insulating substrate; the entire upper surface of the base layer is covered with the emitter layer, and the base electrode on the emitter layer projects through the emitter layer into the base layer; although the two multi-layered compound semiconductor structures are covered with a passivation layer, the emitter layer prevents the base layer from direct contact with the passivation layer so that leakage current hardly flows between the base and the emitter.
展开▼