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METHOD OF CLEANING IMMERSION LITHOGRAPHY APPARATUS, DUMMY WAFER, AND IMMERSION LITHOGRAPHY APPARATUS

机译:清洗浸没光刻设备,哑晶片和浸没光刻设备的方法

摘要

PROBLEM TO BE SOLVED: To efficiently adsorb and remove unwanted particles inside an immersion lithography apparatus.;SOLUTION: A method of cleaning an immersion lithography apparatus includes the steps of: placing a dummy wafer DW on a stage 611 of the immersion lithography apparatus; and moving the stage 611 while supplying an immersion liquid 605 between the dummy wafer DW and a projection lens 604. The dummy wafer DW includes a substrate 10 and an adsorption area 12 provided on the substrate 10 and having stronger power of adsorbing foreign substances (particles) suspended in the supplied immersion liquid 605 than that of the substrate 10.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:为了有效地吸收和去除浸没式光刻设备内部的不想要的颗粒。解决方案:清洗浸没式光刻设备的方法包括以下步骤:将虚拟晶片DW放置在浸没式光刻设备的台架611上;将晶片DW放置在浸没式光刻设备的台架611上。并在使虚设晶片DW与投射透镜604之间供给浸渍液605的同时使载物台611移动。虚设晶片DW包括基板10和设置在基板10上的吸附区域12,该吸附区域12具有更强的吸附异物(粒子)的能力。 )悬浮在所提供的浸没液体605中比基板10的浸没状态;

著录项

  • 公开/公告号JP2010103363A

    专利类型

  • 公开/公告日2010-05-06

    原文格式PDF

  • 申请/专利权人 NEC ELECTRONICS CORP;

    申请/专利号JP20080274630

  • 发明设计人 ONODA ATARU;MATSUI YOSHINORI;

    申请日2008-10-24

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:54

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