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Method for generating a bandgap reference voltage circuit and the temperature curvature corrected reference voltage

机译:带隙基准电压电路的生成方法及温度曲率校正基准电压

摘要

(10), first and second transistors (not Q1 to Q4) is supplied to the PTAT current (12 to 15), and operational amplifier (A1), the first transistor stack first (8) the first current mirror circuit and while maintaining the same level as the resistor (R1) and the emitter voltage of the transistor (Q2), to draw PTAT current first current mirror circuit (10). It is scaled Vice resistance (R3), PTAT correction voltage which is generated through (R1) main resistance (dVbe) is summed with the uncorrected base-emitter voltage CTAT first transistor (Q1). And, is summed with the (13) PTAT current, (dVbe) is the TlnT temperature curvature of uncorrected base-emitter voltage CTAT first transistor (Q1) correction PTAT voltage which is generated mainly via a resistor (R1) is CTAT correction current to have a curvature TlnT complementary, and applied to the emitter of the second transistor (Q3).
机译:(10),将第一和第二晶体管(非Q1至Q4)提供给PTAT电流(12至15),并且运算放大器(A1),第一晶体管堆叠首先(8)第一电流镜电路并同时保持与电阻(R1)和晶体管(Q2)的发射极电压相同的电平,以从第一电流镜电路(10)汲取PTAT电流。它是按比例缩放的副电阻(R3),通过(R1)主电阻(dVbe)生成的PTAT校正电压与未校正的基极-发射极电压CTAT第一晶体管(Q1)相加。并且,与(13)PTAT电流相加,(dVbe)是主要通过电阻(R1)产生的未校正基极-发射极电压CTAT第一晶体管(Q1)校正PTAT电压的TlnT温度曲率,是CTAT校正电流具有互补的曲率TlnT,并施加到第二晶体管(Q3)的发射极。

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