首页> 外国专利> A BANDGAP VOLTAGE REFERENCE CIRCUIT AND A METHOD FOR PRODUCING A TEMPERATURE CURVATURE CORRECTED VOLTAGE REFERENCE

A BANDGAP VOLTAGE REFERENCE CIRCUIT AND A METHOD FOR PRODUCING A TEMPERATURE CURVATURE CORRECTED VOLTAGE REFERENCE

机译:带隙电压基准电路和产生温度曲线校正的电压基准的方法

摘要

A bandgap voltage reference circuit (1) comprises a bandgap cell (7) comprising first and second transistor stacks (8,9) of first transistors (Q1,Q2) and second transistors (Q3,Q4), respectively, arranged for developing a correcting PTAT voltage (&Dgr;Vbe) across a primary resistor (R1) proportional to the difference in the base-emitter voltages of the first and second transistor stacks (8,9). A first current mirror circuit (10) provides PTAT currents (12 to 15) to the emitters of the first and second transistors (Q1 to Q4), and an operational amplifier (A1) maintains the voltage on the emitter of the first transistor (Q2) of the first transistor stack (8) at the same level as the resistor (R1) and sinks a PTAT current from the first current mirror circuit (10) from which the other PTAT currents are mirrored. The correcting PTAT voltage (&Dgr;Vbe) developed across the primary resistor (R1) is scaled onto a secondary resistor (R3) and summed with the uncorrected base-emitter CTAT voltage of the first transistor (Q1) of the first transistor stack (8) for providing the voltage reference between an output terminal (5) and ground (3). A CTAT correcting current (Icr) is summed with the PTAT current (13) and applied to the emitter of the second transistor (Q3) of the second transistor stack (9) so that the correcting PTAT voltage (&Dgr;Vbe) developed across the primary resistor (R1) has a TlnT curvature complementary to the TlnT temperature curvature of the uncorrected base-emitter CTAT voltage of the first transistor (Q1). Thus the reference voltage developed between the output terminal (5) and the ground (3) is temperature stable and TlnT temperature curvature corrected. The CTAT correcting current is derived from the base-emitter CTAT voltage of the first transistor (Q1) in a CTAT current generating circuit (12) through a second current mirror circuit (15).
机译:带隙电压基准电路( 1 )包括带隙单元( 7 ),该带隙单元包含第一晶体管的第一和第二晶体管堆栈( 8,9 ) (Q 1, Q 2 )和第二晶体管(Q 3, Q 4 )分别用于在第一电阻器(R 1 )两端的第一电阻器(R 1 )上产生校正的PTAT电压(&DgrV be ) ( 8,9 )。第一电流镜电路( 10 )将PTAT电流( 12 15 )提供给第一和第二晶体管的发射极(Q 1 至Q 4 ),运算放大器(A 1 )保持第一晶体管(Q 2 <第一晶体管堆栈( 8 )的电阻与电阻(R 1 )处于同一电平,并从第一电流镜电路( B> 10 ),从中镜像其他PTAT电流。在初级电阻器(R 1 )上产生的校正PTAT电压(&DgrV be )被缩放到次级电阻器(R 3 )上并与第一晶体管堆栈( 8 )的第一晶体管(Q 1 )的未校正基极-发射极CTAT电压相加,以在输出端子之间提供参考电压( 5 )和地面( 3 )。将CTAT校正电流(I cr )与PTAT电流( 13 )相加,并施加到第二晶体管的发射极(Q 3 )(第二个晶体管堆栈( 9 )),以便在主电阻(R 1 )上产生校正的PTAT电压(&DgrV be ) )的TlnT曲率与第一晶体管(Q 1 )的未校正基极-发射极CTAT电压的TlnT温度曲率互补。因此,在输出端子( 5 )和接地( 3 )之间产生的参考电压是温度稳定的,并且TlnT温度曲率已校正。 CTAT校正电流是从CTAT电流产生电路( 12 )中的第一晶体管(Q 1 )的基极-发射极CTAT电压通过第二电流镜电路得出的( 15 )。

著录项

  • 公开/公告号EP1599776A1

    专利类型

  • 公开/公告日2005-11-30

    原文格式PDF

  • 申请/专利权人 ANALOG DEVICES INCORPORATED;

    申请/专利号EP20040713623

  • 发明设计人 MARINCA STEFAN;

    申请日2004-02-23

  • 分类号G05F3/30;

  • 国家 EP

  • 入库时间 2022-08-21 21:32:43

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