Non-volatile storage element, a non-volatile storage device, nonvolatile semiconductor memory device, and method of manufacturing a non-volatile memory element

摘要

And is interposed between the first electrode (103), second electrode (105), second electrode (103) a first electrode (104), both electrodes nonvolatile memory element of the present invention, (103) , with the resistance variable layer whose resistance value changes reversibly based on the electrical signal applied to the (105) between (104) comprises at least tantalum oxide, the tantalum oxide (104) The variable resistance layer When expressed as TaO _x things, the resistance change layer (104) is configured to satisfy a 2.5 0 x.