non-volatile memory element, a non-volatile storage device, method of manufacturing a nonvolatile memory element, and the manufacture of non-volatile storage device how

摘要

non-volatile memory element (20), a first electrode (105), second and two electrodes (107), a first electrode (105) is interposed between the second electrode (107), the first resistance variable layer to be connected to the first electrode (105) and (1061), the second electrode a second resistance variable layer (1062) and the resistance variable layer formed by stacking to be connected to the (107) (106), which has an oxygen barrier property, coating the side surface of the resistance variable layer (106) with sidewall protection layer (108), the first resistance variable layer (1061) comprises a first metal oxide and (106a), is formed around the first metal oxide and a first metal oxide object (106a) than is composed de third metal oxide oxygen shortage degree is small and (106c), the second of the resistance change layer (1062), the lack of oxygen level than the first metal oxide (106a) and a second metal oxide is small (106b).