Non-volatile storage element, a non-volatile storage device, nonvolatile semiconductor memory device, and method of manufacturing a non-volatile memory element

摘要

The interposed between the first electrode (103), second electrode (105), second electrode (103) a first electrode (105), both electrodes nonvolatile memory element of the present invention (103, 105) with the resistance variable layer whose resistance value changes reversibly based on the electrical signal applied between the (104), the resistance change layer (104), tantalum oxide of the first containing the tantalum oxide of the first configured the second tantalum oxide layer comprising tantalum oxide of the second oxygen content of tantalum oxide and the first (107) mono layer is different (108) are stacked, the tantalum oxide of the first and satisfied the 2.5 x 0 if it is expressed as TaO _x things, it is configured to satisfy a y ≦ 2.5 x if it is expressed as TaO _y tantalum oxide of the second and folding the second electrode (105) is in contact with the (108) the second tantalum oxide layer, the second electrode (105) is composed of tantalum and platinum.