首页> 外国专利> APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS

APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS

机译:用于生长大面积二氧化钒薄膜的设备以及用于生长该设备中的大面积氧化薄膜的方法

摘要

Provided is a technology for in-situ growing a large area VO2 thin film which is an MIT material without using a conductive adhesive for high temperatures such as a silver paste. Generally, when a VO2 thin film, which is an MIT material, is grown using a PLD or sputtering method under a high temperature, a conductive adhesive is used to improve thermal conduction. However, the thin film may be contaminated by the conductive adhesive and the conductive adhesive should be removed after growing the thin film. Therefore, adherence between the substrate and the surface of a heater when growing the thin film needs to be improved, and thus, a large area VO2 thin film growing apparatus which may grow the large area VO2 thin film easily and a method of growing the large area VO2 thin film are provided.
机译:提供了一种用于原位生长大面积的VO 2 薄膜的技术,该薄膜是一种MIT材料,无需使用用于高温的导电胶(例如银浆)。通常,当在高温下使用PLD或溅射方法生长作为MIT材料的VO 2 薄膜时,使用导电粘合剂来改善导热性。然而,薄膜可能被导电粘合剂污染,并且在生长薄膜之后应当去除导电粘合剂。因此,在薄膜生长时,需要提高基板与加热器的表面之间的密合性,因此,需要大面积的VO 2 薄膜生长装置。提供了一种> 2 薄膜,并提供了一种大面积生长VO 2 薄膜的方法。

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