首页> 外国专利> Apparatus for growing large area vanadium dioxide thin film and method for growing large area oxide thin film in the same apparatus

Apparatus for growing large area vanadium dioxide thin film and method for growing large area oxide thin film in the same apparatus

机译:用于生长大面积二氧化钒薄膜的设备以及在该设备中用于生长大面积氧化物薄膜的方法

摘要

the present invention for high temperature conductive adhesive (silver paste, and so on) used to do a large-area metal-insulator transition (MIT) material VO 2 relates to a thin film deposition technique that can be in in-situ. PLD at a high temperature (Pulsed Laser Deposition), or the like metal sputter - the MIT material VO 2 a for high-temperature conductive adhesive used to increase the thermal time to grow and commonly used. However, the problems of such process occurs after the removal of the adhesive contamination and growth of thin film growth on glue. The present invention does not use a conductive adhesive for high temperatures, by solving the above problems to improve the adhesion of the thin film grown upon the substrate and the heater surface, excellent properties are large area VO 2 a thin film than the conventional method The service can be easily grown in a large area and a large area device vanadium oxide thin film growth method of an oxide thin film growth in the growing apparatus.
机译:用于做大面积金属-绝缘体转变(MIT)材料VO 2 的高温导电粘合剂(银浆等)的本发明涉及一种薄膜沉积技术,该技术可以原位。 PLD在高温下(脉冲激光沉积)或类似的金属溅射法-MIT材料VO 2a 用于高温导电胶粘剂,用于增加热生长时间并常用。但是,这种方法的问题是在除去粘合剂污染并在胶上形成薄膜生长之后出现的。本发明不使用用于高温的导电粘合剂,通过解决上述问题以改善生长在基板上和加热器表面上的薄膜的粘合性,优良的性能是大面积VO 2 a与常规方法相比,该薄膜可以容易地在大面积上生长,并且在大面积装置中使用氧化钒薄膜生长法在生长设备中生长氧化物薄膜。

著录项

  • 公开/公告号KR101275805B1

    专利类型

  • 公开/公告日2013-06-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090095129

  • 发明设计人 김봉준;김현탁;서기완;

    申请日2009-10-07

  • 分类号C23C14/34;C23C14/08;C23C14/50;H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:01

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