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Influence of the crystalline nature of growing surface on the properties of vanadium pentoxide thin films

机译:生长表面晶体性质对五氧化二钒薄膜性能的影响

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摘要

Vanadium pentoxide (V2O5) thin films have been deposited by reactive direct current (DC) magnetron sputtering onto glass and Si (100) substrates in identical deposition conditions and investigated for their physical properties. The films deposited on glass substrates were amorphous whereas the film deposited on Si substrates were polycrystalline (orthorhombic crystal structure and strong (411) orientation plane). The core level spectrum of the film showed V2p(1/2) and V2p(3/2) peaks at the binding energy 517.18 and 524.38 eV respectively whichconfirmed the presence of V2O5. The films exhibited a nanosheet-like surface morphology grown normal to the substrate (Si and Glass). The optical bandgap value of the films deposited on glass and Si substrates was found to be in the range of 2.5-3.49 eV and 1.72-2.45 eV respectively. V2O5 films deposited on glass and Si (100) exhibited a temperature coefficient of resistance (TCR) of -0.6 and -1.8%/degrees C respectively.
机译:已经通过反应直流(DC)磁控溅射在相同的沉积条件下通过反应直流(DC)磁控溅射沉积钒氧化物(V2O5)薄膜并研究其物理性质。 沉积在玻璃基板上的薄膜是无定形的,而沉积在Si底物上的膜是多晶(正晶晶体结构和强(411)取向平面)。 薄膜的核心水平谱分别在结合能量517.18和524.38eV处显示V2P(1/2)和V2P(3/2)峰值,其分别确认了V2O5的存在。 薄膜表现出正常生长的纳米片状表面形态,与基材(Si和玻璃)生长。 发现沉积在玻璃和Si底物上的膜的光学带隙值分别为2.5-3.49eV和1.72-2.45eV。 沉积在玻璃和Si(100)上的V2O5薄膜分别显示出-0.6和-1.8%/℃的温度抗性(TCR)。

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