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Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
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机译:在接触区域中具有局部提供的金属硅化物区域的晶体管及其形成方法
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摘要
By performing a silicidation process on the basis of a patterned dielectric layer, such as an interlayer dielectric material, the respective metal silicide portions may be provided in a highly localized manner at the respective contact regions, while the overall amount of metal silicide may be significantly reduced. In this way, a negative influence of the stress of metal silicide on the channel regions of field effect transistors may be significantly reduced, while nevertheless maintaining a low contact resistance.
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