A TRANSISTOR HAVING LOCALLY PROVIDED METAL SILICIDE REGION IN CONTACT AREAS AND A METHOD OF FORMING THE TRANSISTOR

摘要

By performing the retardation process between silicate based on the patterned dielectric layer such as an interlayer dielectric material , each metal silicide portions are provided to each of the contact region in a very localized manner , the amount is significantly reduced while the total of the metal silicide . In this way , the negative effects of stress in the metal silicide on the channel region of the field effect transistor is significantly reduced , yet maintains a low contact resistance .