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Method for forming a resist pattern of magnetic device by etching with a gas cluster ion beam
Method for forming a resist pattern of magnetic device by etching with a gas cluster ion beam
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机译:用气体团簇离子束刻蚀形成磁性器件抗蚀剂图形的方法
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摘要
A resist pattern for lift-off is formed on a first film composed of one or more layers deposited on a substrate. The first film is patterned by dry-etching using the resist pattern as a mask. Subsequently, a second film is deposited with presence of the resist pattern on the first film. Then, the resist pattern for lift-off is removed for conducting lift-off. Subsequently, the resulting substrate is etched. In the etching, the substrate is dry-etched using etching particles which are oriented at an incident angle set in a range of 60 ° to 90 ° relative to the normal direction of the substrate.
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