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Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method
Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method
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机译:校正光掩模中的临界尺寸的方法以及使用该方法校正了临界尺寸的光掩模
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摘要
Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.
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