Method for correcting the critical dimension uniformity of a photomask for semiconductor lithography

摘要

The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps:determining a transfer coefficient as a calibration parameter,correcting the photomask by writing pixel fields,verifying the photomask corrected thus,wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.