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Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions
Method of manufacturing non-volatile memory device using multiple element isolation regions and perpendicular extensive device regions
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机译:使用多个元件隔离区和垂直扩展器件区制造非易失性存储器件的方法
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摘要
Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films therebelow are formed so as to largely face a control gate. The control gate between the separate first and second floating gates faces to the channel region via thin interlayer insulating layer. Therefore, a semiconductor device according to the present invention can inject electrons the charge storage film without causing writing errors in a writing operation, and therefore can increase in reliability thereof, control a writing voltage, prevent loss of the electrons stored in the charge storage film, and reliably apply a bias voltage to a channel region.
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