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manufacturing process of an electronic device integrated in a semiconductor substrate of power at wide range of forbidden band and electronic device thus obtained
manufacturing process of an electronic device integrated in a semiconductor substrate of power at wide range of forbidden band and electronic device thus obtained
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机译:集成在功率禁带范围大的功率的半导体衬底中的电子设备的制造方法以及由此获得的电子设备
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摘要
An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type. The process comprises the steps of: forming, on the semiconductor body, a first mask having a first window and a second window above a first surface portion and a second surface portion of the semiconductor body; forming, within the first and second surface portions of the semiconductor body underneath the first and second windows, at least one first conductive region and one second conductive region having a second conductivity type, the first conductive region and the second conductive region facing one another; forming a second mask on the semiconductor body, the second mask having a plurality of windows above surface portions of the first conductive region and the second conductive region; forming, within the first conductive region and the second conductive region and underneath the plurality of windows, a plurality of third conductive regions having the first conductivity type; removing completely the first and second masks; performing an activation thermal process of the first, second, and third conductive regions at a high temperature; and forming body and source regions.
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