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PREDICTIVE ERROR CORRECTION CODE GENERATION FACILITATING HIGH-SPEED BYTE-WRITE IN A SEMICONDUCTOR MEMORY

机译:半导体存储器中高速字节写入的预测错误更正代码生成

摘要

Write check bits are generated in a predictive manner for partial-word write transactions in a memory system implementing error correction coding. A read data word (RD) and associated read check bits (RGB) are read from a memory (101) address. If an error exists in a byte of the read data word, this byte is identified. At the same time, one or more bytes of the uncorrected read data word are merged with one or more bytes of a write data word (WD), thereby creating a merged data word (MWD). Write check bits (WCB) are generated in response to the merged data word. If the merged data word includes a byte of the read data word which contains an error, the write check bits are modified to reflect this error. The merged data word and the modified (or unmodified) write check bits are then written to the address.
机译:在实现纠错编码的存储系统中,以预测方式为部分字写事务生成写检查位。从存储器(101)地址中读取读取数据字(RD)和相关的读取校验位(RGB)。如果读取数据字的字节中存在错误,则标识该字节。同时,未校正的读取数据字的一个或多个字节与写入数据字(WD)的一个或多个字节合并,从而创建合并数据字(MWD)。响应于合并的数据字,产生写校验位(WCB)。如果合并的数据字包括读数据字的一个字节,其中包含一个错误,则将写校验位修改为反映该错误。然后,将合并的数据字和已修改(或未修改)的写入校验位写入地址。

著录项

  • 公开/公告号EP1815338B1

    专利类型

  • 公开/公告日2010-08-11

    原文格式PDF

  • 申请/专利权人 MOSYS INC;

    申请/专利号EP20050823321

  • 发明设计人 LEUNG WINGYU;TAM KIT SANG;

    申请日2005-11-03

  • 分类号G06F11/10;G11C29/00;

  • 国家 EP

  • 入库时间 2022-08-21 18:38:58

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