首页> 外国专利> METHOD FOR DETERMINING DEFECTS IN SUBSTRATE AND AN APPARATUS FOR EXPOSING SUBSTRATE IN LITHOGRAPHY PROCESS, CAPABLE OF DETERMINING EXISTENCE OF DEFECTS USING DEVIATION OF FRACTION

METHOD FOR DETERMINING DEFECTS IN SUBSTRATE AND AN APPARATUS FOR EXPOSING SUBSTRATE IN LITHOGRAPHY PROCESS, CAPABLE OF DETERMINING EXISTENCE OF DEFECTS USING DEVIATION OF FRACTION

机译:光刻工艺中基质缺陷的测定方法和基质曝光装置,能够利用分度偏差来确定缺陷的存在

摘要

PURPOSE: A method for determining defects in a substrate and an apparatus for exposing a substrate in a lithography process are provided to determine existence of defects in the substrate, by detecting variations of fraction measured across the scan range.;CONSTITUTION: An illuminator system(IL) is constituted to condition a radiation beam(B). A substrate table(WT) is constituted to keep a substrate(W). Scan range of the substrate is scanned using a sensor projecting the radiation beam on the substrate. Fraction of the intensity of the radiation reflected from different substrate regions following the scan range is measured. Variations of the fraction measured across the scan range are determined. Existence of defects in the substrate is determined from the variations.;COPYRIGHT KIPO 2010
机译:目的:提供一种确定基板缺陷的方法和一种用于在光刻工艺中曝光基板的设备,通过检测在整个扫描范围内测量的分数变化来确定基板中缺陷的存在。 IL)构成为调节辐射束(B)。衬底台(WT)被构造成保持衬底(W)。使用将辐射束投射到基板上的传感器扫描基板的扫描范围。测量在扫描范围之后从不同基板区域反射的辐射强度的分数。确定在整个扫描范围内测得的馏分的变化。根据变化确定基材中是否存在缺陷。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20090125010A

    专利类型

  • 公开/公告日2009-12-03

    原文格式PDF

  • 申请/专利权人 ASML NETHERLANDS B.V.;

    申请/专利号KR20090047698

  • 发明设计人 SAHA NILAY;PEN HERMEN FOLKEN;

    申请日2009-05-29

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:56

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号