WAFER LEVEL PACKAGE AND A METHOD OF MANUFACTURING THE SAME, CAPABLE OF IMPROVING THE RELIABILITY OF A PACKAGE BY BONDING A SUBSTRATE THROUGH AN ANODIC BONDING MODE

摘要

PURPOSE: A wafer level package and a method of manufacturing the same are provided to prevent warpage due to thermal expansion coefficient difference by improving a chemical resistance property and aging properties of a junction wafer.;CONSTITUTION: In a device, a first VIA(13) is connected with a circuit pattern(11) and is formed inside a first substrate(10). A second via(21) passing through a second substrate is formed inside the second substrate(20). The first VIA and the second via are formed by being etched or punched inside the first substrate and the second substrate. A first bonding pad(12) is formed between the first substrate and the second substrate. The first bonding pad electrically connects the first VIA of the first substrate and the second via of the second substrate. An external connection unit(40) is formed at the bottom of the second substrate. A second bonding pad(30) is formed between the external connection unit and the second substrate.;COPYRIGHT KIPO 2010