METHOD OF FORMING A GATE ELECTRODE IN A SEMICONDUCTOR DEVICE, CAPABLE OF FORMING A METAL SILICIDE LAYER UNIFORMLY BY MAKING A RECESS OF INTER INSULATING LAYER UNIFORM

摘要

PURPOSE: A method of forming a gate electrode in a semiconductor device is provided to prevent a void in an inter insulating layer by using a hard mask pattern as a sacrificed pattern for forming a final control gate.;CONSTITUTION: A tunnel insulating layer, a first silicon layer for floating gate, an insulating layer(115), a second silicon layer for a control gate, a hard mask layer are laminated on a semiconductor substrate. A first interlayer insulating film(120) is formed so that an upper part of the hard mask layer between a plurality of laminating structures is exposed. The hard mask layer having an upper part exposed to the outside is etched selectively.;COPYRIGHT KIPO 2010