MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE CAPABLE OF UNIFORMLY RECESSING A LINER INSULATING LAYER WHICH IS LOCATED ON THE SURFACE OF A GATE PATTERN

摘要

PURPOSE: The manufacturing method of a semiconductor device is provided to form metal silicide of uniform thickness on the surface of a plurality of gate patterns using the thickness difference of a liner insulating layer.;CONSTITUTION: A plurality of gate patterns(101a,101b) is formed on a substrate(100). A liner insulating layer(160) having a first thickness(t1) is formed in the surface of a plurality of gate patterns. A gap fill layer capable of burying the interval of gate patterns is formed on the liner insulating layer. Metal layers(180a,180b) are formed on the liner insulating layer and the gap fill layer. Metal silicide is formed using the metal layer. A first insulation layer is formed on the substrate. First silicon is formed on the substrate. A second insulation layer is formed on the first silicon. Second silicon is formed on the second insulation layer. A plurality of gate pattern is formed by etching the first insulation layer, the first silicon, the second insulation layer, and the second silicon.;COPYRIGHT KIPO 2012