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机译:浅沟槽隔离的凹入表面几何形状对接触蚀刻停止衬层和Ge基应力源应变的纳米级器件的阵列类型排列的影响
Natl Taiwan Univ, Dept Mech Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan;
Natl Taiwan Univ, Dept Mech Engn, 1,Sec 4,Roosevelt Rd, Taipei 10617, Taiwan;
Chung Yuan Christian Univ, Dept Mech Engn, 200 Chungpei Rd, Chungli 32023, Taoyuan County, Taiwan;
Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung, Taiwan;
Chung Yuan Christian Univ, Dept Mech Engn, 200 Chungpei Rd, Chungli 32023, Taoyuan County, Taiwan;
Chung Yuan Christian Univ, Dept Mech Engn, 200 Chungpei Rd, Chungli 32023, Taoyuan County, Taiwan;
Chung Yuan Christian Univ, Dept Mech Engn, 200 Chungpei Rd, Chungli 32023, Taoyuan County, Taiwan;
Strained silicon germanium; Compressive contact etch stop liner; Device stress; Numerical simulation; Mobility gain; Shallow trench isolation;
机译:具有浅沟道隔离应力缓冲层的应变CMOS器件
机译:通过表面布局设计放大表面涂层的有效内在应力对纳米级Ge基高k /金属栅极器件性能的影响
机译:使用凹槽沟道阵列晶体管结构的动态随机存取存储器的混合浅沟槽隔离引起的机械应力的测量
机译:带有双触点蚀刻停止衬里应力源的可伸缩多栅极MOSFET,绝缘体上带有应变硅(sSOI)