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Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

机译：通过更换顶部电极材料的三层CEO2 / TI / CEO2电阻开关装置的耐力和循环到循环均匀性改善

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Anwar Manzoor Rana; Tahira Akbar; Muhammad Ismail; Ejaz Ahmad; Fayyaz Hussain; Ijaz Talib; Muhammad Imran; Khalid Mehmood; Khalid Iqbal; M. Younus Nadeem;
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1. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material [J] . Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail, Scientific reports. . 2017,第1期

机译：通过更换顶部电极材料的三层CEO2 / TI / CEO2电阻开关装置的耐力和循环到循环均匀性改善
2. Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices [J] . Ismail M., Rana A. M., Nisa S. -U., Current applied physics: the official journal of the Korean Physical Society . 2017,第10期

机译：退火处理对CEO2 / TiO2双层电阻切换存储器均匀性的影响
3. Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window [J] . Zheng Hong, Kim Hyung Jun, Yang Paul, Semiconductor science and technology . 2017,第5期

机译：具有大存储窗口的Ag / CeO2 / Pt器件的无形电阻切换特性
4. Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method [C] . Jie Yu, Xiaoxin Xu, Tiancheng Gong, International Conference on Electron Devices and Solid-State Circuits . 2019

机译：通过新的脉冲方法提高价态变化的电阻开关记忆（VCM）的均匀性和耐力
5. Materials growth and characterization of thermoelectric and resistive switching devices [D] . Norris, Kate J. 2015

机译：热电和电阻开关设备的材料生长和特性
6. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material [O] . Anwar Manzoor Rana, Tahira Akbar, Muhammad Ismail, -1

机译：通过更改顶部电极材料来改善三层CeO2 / Ti / CeO2电阻开关器件的耐久性和周期间一致性
7. Detection of filament formation in forming-free resistive switching $SrTiO_{3}$ devices with Ti top electrodes [O] . Stille, S., Lenser, Ch., Dittmann, R., 2012

机译：带有钛顶部电极的免成型电阻开关$ SrTiO_ {3} $器件中细丝形成的检测

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

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