WAFER PROCESSING METHOD FOR GUARANTEEING OVERLAYER SI TO KEEP PERFECT QUALITY IN 3-DIMENSIONAL IC INTERGRATION

摘要

PURPOSE: A wafer processing method for guaranteeing overlayer Si to maintain perfect quality in 3-dimensional IC intergration is provided to keep initial process state or quality by eliminating small cracks and chipping at the edge of an upper layer wafer. CONSTITUTION: A PMD oxide film is formed on a lower layer substrate(S501). The contact is formed (S503). The first metal wiring is formed in the front of the lower layer substrate(S505). The oxide film is laminated in the front of the lower layer substrate(S507). The through-via hole is formed in the front of the lower layer substrate(S509). The second metal wiring is formed in the front of the lower layer substrate(S511). The second metal wiring is formed in the front of the lower layer substrate(S511). The nitride film or the oxide film is lamintaed in the front of the lower layer substrate(S515). The lower layer substrate is bonded with the upper layer wafer(S517). The upper layer wafer is bevel-etched(S523). The wafer alignment is formed(S525). The three-dimensional integrated circuit is integrated.