首页> 外国专利> COMPOUND FOR CVD AND A CHEMICAL VAPOR DEPOSITION METHOD FOR A RUTHENIUM FILM OR A RUTHENIUM COMPOUND FILM, CAPABLE OF IMPROVING STABILITY AND VAPOR PRESSURE

COMPOUND FOR CVD AND A CHEMICAL VAPOR DEPOSITION METHOD FOR A RUTHENIUM FILM OR A RUTHENIUM COMPOUND FILM, CAPABLE OF IMPROVING STABILITY AND VAPOR PRESSURE

机译:用于化学气相沉积的化合物以及用于钌膜或钌化合物膜的化学气相沉积方法,能够提高稳定性和蒸气压

摘要

PURPOSE: A compound for CVD and a chemical vapor deposition method for a ruthenium film or a ruthenium compound film are provided to provide an organic ruthenium compound, and to improve stability and vapor pressure.;CONSTITUTION: A compound for CVD is composed of an organic ruthenium compound. The organic ruthenium compound is formed by coordinating two beta-diketones and two organic ligands with a ruthenium. Olefin coordinating in the ruthenium is one of ethylene, propylene, 2-methyl propylene, butane, and 1,3-butadiene. Nitrile coordinating in the ruthenium is acetonitrile or acrylonitrile.;COPYRIGHT KIPO 2010
机译:目的:提供用于CVD的化合物和用于钌膜或钌化合物膜的化学气相沉积方法,以提供有机钌化合物,并提高稳定性和蒸气压。;组成:用于CVD的化合物由有机组成钌化合物。有机钌化合物是通过将两个β-二酮和两个有机配体与钌配位而形成的。钌中配位的烯烃是乙烯,丙烯,2-甲基丙烯,丁烷和1,3-丁二烯中的一种。钌中配位的腈是乙腈或丙烯腈。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100048982A

    专利类型

  • 公开/公告日2010-05-11

    原文格式PDF

  • 申请/专利权人 TANAKA KIKINZOKU KOGYO K.K.;

    申请/专利号KR20100034811

  • 发明设计人 SAITO MASAYUKI;SAGAE TAKEYUKI;

    申请日2010-04-15

  • 分类号C23C16/18;H01L21/205;C01G55/00;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:51

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