RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF RUTHENIUM THIN FILM AND RUTHENIUM COMPOUND THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide raw material compounds which are useful for producing ruthenium or ruthenium compound thin films by a chemical vapor deposition(CVD) method, can be decomposed only by a heating treatment in an inert gas, even when oxygen gas is not introduced into the CVD reaction system, and can prevent the doping of oxygen into a ground substrate, wherein the doping of the oxygen gas affects the characteristics of electric or electronic parts having the thin films, and from which the thin films having good properties can be produced.;SOLUTION: The dicarbonyltrimethylsilylruthenium compound, tricarbonylruthenium compound or tetracarbonylbis(trimethylsilyl)ruthenium of the general formula 1, 2 or 3 (X is a straight chain/branched alkenyl or cycloalkenyl, straight chain/branched alkadienyl or cycloalkadienyl, cycloalkatrienyl or cycloalkatrienyl having one to four double bonds), which are used for producing ruthenium thin films or ruthenium compound thin films by the CVD method.;COPYRIGHT: (C)2002,JPO