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RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF RUTHENIUM THIN FILM OR RUTHENIUM COMPOUND THIN FILM
RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF RUTHENIUM THIN FILM OR RUTHENIUM COMPOUND THIN FILM
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机译:用于化学气相沉积的钌化合物以及用于钌薄膜或钌复合薄膜的化学气相沉积的方法
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摘要
PROBLEM TO BE SOLVED: To obtain a ruthenium compound for a chemical vapor deposition, capable of producing a ruthenium thin film or a ruthenium compound thin film having excellent morphology even in the cases of high-temperature deposition and excellent step coverage and producing a thin film having relative low resistivity.;SOLUTION: This ruthenium compound is useful for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method and is a ruthenium compound for a chemical vapor deposition comprised of an acylcyclopentadienyl(cyclopentadienyl)ruthenium substituted with a straight-chain or branched-chain hydrocarbon group. The ruthenium compound has excellent morphology even in the case of a decomposition at a relatively high temperature of 250-450°C and can produce a ruthenium thin film having low resistivity.;COPYRIGHT: (C)2002,JPO
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